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Public source

SK hynix HBM4

SK hynix HBM4 is a publicly named high-bandwidth DRAM stack.

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Overview

A 19 March 2025 newsroom post describes 12-layer HBM4 samples. This listing records SK hynix’s HBM4 and MR-MUF stack, not HBM3E as a second row. Samsung HBM4 and Micron HBM are other vendors’ implementations of the same device class. Layer counts and bandwidth figures should be confirmed on SK hynix’s current newsroom and product pages.

Technical capabilities

  • HBM4 stack with 2,048 I/O terminals

  • Advanced MR-MUF molding between DRAM dies

  • Official materials describe 12-layer samples and mass-production readiness

  • Distinct from Samsung HBM4 stacking and Micron HBM devices

Lifecycle and categories

Lifecycle stages
Memory and subsystem IP

Insights

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Related events

Editorial illustration of a large convention-center exhibit hall. Not an official SC26 photograph or poster.
NOV152026
Conference

SC26

  • November 15 – 20, 2026
  • Chicago, Illinois, USA
  • Organized by SC Conference Series
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