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South Korea
Memory semiconductor company that publishes high-bandwidth DRAM technologies, including HBM4 stacked with Advanced MR-MUF.
1 published solution.
SK hynix HBM4 doubles I/O to 2,048 terminals, claims >10 Gbps and more than 40% better power efficiency versus the prior generation, and uses Advanced MR-MUF to stack DRAM with warpage control and heat dissipation.
