300mm High-Thermal-Conductivity SiC Substrates

Coherent has begun customer sampling of 300 mm high-thermal-conductivity silicon carbide substrates intended as heat-spreading materials for AI and HPC infrastructure.

The company positions the materials for next-generation heat spreaders and related packaging, citing high thermal conductivity, mechanical strength and thermal stability. Coherent states that the high-thermal-conductivity substrates are engineered to improve heat spreading by up to 25% more than current solutions while remaining compatible with existing semiconductor manufacturing platforms. Sampling moves the 300 mm SiC platform from internal development to customer evaluation. Coherent describes vertically integrated capabilities in SiC crystal growth, wafering, polishing and characterization as support for later high-volume manufacturing; this listing records customer sampling, not high-volume production. The announcement is distinct from Coherent’s III-V epitaxial wafer platform already in the catalog.