DEMONSTRATED 512GB DDR5
Demonstrated 512GB DDR5 RDIMM on multiple server platforms

Demonstrated 512GB DDR5 RDIMM on multiple server platforms
Speeds up to 9,200 MT/s; TSV-stacked DRAM packages
AI & HPC · Data Center
Public source
On 15 September 2026 Micron announced the successful demonstration of a 512GB DDR5 registered DIMM on multiple server platforms.
Silicon Showcase illustrative visual
Illustrative representation based on publicly available technical information.
Micron 512GB DDR5 RDIMM is the ultra-dense server module Micron demonstrated on 15 September 2026, with speeds up to 9,200 MT/s. Volume production is expected in the second half of 2027.
The company describes the module as enabled by advanced vertical interconnect packaging: DRAM dies stacked and interconnected with through-silicon vias (TSVs) to raise density inside the DRAM packages. Official figures include speeds up to 9,200 MT/s, up to 12 TB of DDR5 DRAM in a single 24-slot dual-socket server, and more than 60% lower operating power compared with four 128GB RDIMMs (16.0 W for one 512GB module versus 44.2 W total for four 128GB modules). Micron also states that for Spark SVM-based data analytics the 512GB RDIMMs can deliver up to 1.4 times higher performance compared with 256GB DDR5 configurations, and names RocksDB and Redis among memory-intensive databases and caching platforms. AMD and Intel are described as actively validating the module. Micron expects 512GB RDIMMs to be in volume production sometime in the second half of 2027, aligned to customer needs. This listing records a demonstrated module with production expected in H2 2027; it is not described here as commercially shipping.
Key characteristics associated with this technology.
Demonstrated 512GB DDR5 RDIMM on multiple server platforms
Speeds up to 9,200 MT/s; TSV-stacked DRAM packages
Up to 12 TB DDR5 in a 24-slot dual-socket server
Volume production expected in the second half of 2027
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