Samsung GAA MBCFET Process

Samsung’s 3 nm foundry node introduced Gate-All-Around transistors as Multi-Bridge-Channel FETs (MBCFET): stacked nanosheet channels with the gate on all four sides, replacing FinFET for better electrostatic control.

Official Samsung Semiconductor news dated 30 June 2022 describes start of 3 nm production using Gate-All-Around Multi-Bridge-Channel FETs, with stacked nanosheet channels and the gate on all four sides. Foundry logic-node pages present continued 3 nm and 2 nm GAA roadmap nodes. This listing records the GAA/MBCFET process platform rather than each SF node as a separate SKU. TSMC listings in the catalog are packaging technologies (CoWoS, InFO, SoIC, 3DFabric), not logic process nodes. Samsung Foundry is not a second organization; this process belongs to Samsung Semiconductor. PPA claims and node names should be confirmed on Samsung’s current foundry pages.