
DVCon Europe 2026
- November 17 – 18, 2026
- Munich, Germany
- Organized by Accellera Systems Initiative
Public source
The LEE Flash G1 page reviewed on 12 November 2026 describes G1 as based on simple SONOS architecture, scalable to 40 nm geometry, supporting automotive-grade temperature/quality, and suited to medium capacities up to several 100 KBytes, without changing standard CMOS logic transistor characteristics/SPICE models.
Sample spec table lists 180 BCD platform, 256 KByte memory, 64+8 word size, 100k P/E cycles, VDD 1.62–1.98 V / VCC 3.0–5.5 V, 2 additional masks, Tj −40–150°C, and 10-year retention at 125°C post 10K cycles at 125°C. Features emphasize high-temperature retention, low-power FN-tunneling program/erase, 2–3 mask adder, reuse of existing CMOS IP, and short test/bake time. Availability table includes TSMC 180 BCD 256KB AEC-Q100 Grade 1; multiple SMIC 90 BCDE/BCDA densities; GTA 90 BCD; SK Hynix 110 BCD 512KB; and PSMC 90 mixed-signal consumer densities. Home page frames a Nonvolatile Memory IP business providing easily embedded NVM IP and notes G1 on TSMC automotive platform AEC-Q100 Grade 1. Official product page confirms licensable automotive eFlash NVM IP with foundry/density table.
Published as design IP
Licensable semiconductor IP. This listing is not a finished controller chip.
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Embedded Flash (SONOS eFlash)
Numbered specification: LEE Flash G1
LEE Flash G1 is named for this product on the reviewed page.
Numbered specification: densities 32–512 KByte across listed foundry rows
densities 32–512 KByte across listed foundry rows is named for this product on the reviewed page.
Numbered specification: AEC-Q100 Grade 1 automotive rows
AEC-Q100 Grade 1 automotive rows is named for this product on the reviewed page.
Attopsemi I-fuse is licensable OTP memory IP based on a non-explosive fuse programming mechanism. The official technology page states foundry-independent OTP without extra masks and physics-based electro-migration programming.
View solutionEmbedded flash technology for compatible chip processes and applications.
View solutioneMemory NeoFuse is anti-fuse embedded OTP/PMTP silicon IP for logic process nodes, not a discrete memory product.
View solutionRAAAM GCRAM is licensable CMOS-compatible embedded memory IP positioned as a drop-in SRAM alternative. The official site claims up to 50% area reduction and up to 3× power reduction versus SRAM with no extra process steps.
View solutionRangduru DX-MRAM is positioned as licensable ultra-high-density logic OTP / AI memory IP. The official site brands Rangduru as a global leader in ultra-high-density, low-cost LOGIC OTP non-volatile memory solutions using DX-MRAM technology.
View solutionWeebit ReRAM is embedded resistive-RAM IP, not a discrete DRAM or NAND catalog.
View solution
