SILICON AND SILICON-GERMANIUM
Silicon and silicon-germanium epitaxy for advanced transistor structures
Silicon and silicon-germanium epitaxy for advanced transistor structures
Selective epitaxy and surface preclean as platform capabilities
Automotive · AI & HPC · Energy
Public source
ASM publishes epitaxy equipment and process technology for growing crystalline films on semiconductor wafers.
Silicon Showcase illustrative visual
Illustrative representation based on publicly available technical information.
ASM epitaxy is a crystalline film-growth equipment platform covering silicon and silicon-germanium transistor epitaxy and silicon carbide epitaxy. Distinct from ASM atomic layer deposition.
Official epitaxy pages describe silicon, silicon-germanium and phosphorous-doped silicon films used to form strained channel and source/drain regions in advanced transistors, plus selective epitaxy and surface preclean. The same technology area includes silicon carbide epitaxy for high-voltage power-device wafers used in electric vehicles and renewable energy. Named tool series remain capabilities of this epitaxy platform rather than separate listings. Epitaxy is distinct from ASM atomic layer deposition, which is listed separately. Process recipes and tool configurations should be confirmed on ASM’s current epitaxy pages.
Key characteristics associated with this technology.
Silicon and silicon-germanium epitaxy for advanced transistor structures
Selective epitaxy and surface preclean as platform capabilities
Silicon carbide epitaxy for power-device wafers
Distinct from ASM atomic layer deposition, which is listed separately
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