Discover 169 technologies from leading innovators around the world.
HANMI Dual TC Bonder is a thermocompression bonding platform for HBM die stacking.
AI & HPCData CenterView Technology
SK hynix HBM4 doubles I/O to 2,048 terminals, claims >10 Gbps and more than 40% better power efficiency versus the prior generation, and uses Advanced MR-MUF to stack DRAM with warpage control and heat dissipation.
AI & HPCData CenterView Technology
Samsung’s 3 nm foundry node introduced Gate-All-Around transistors as Multi-Bridge-Channel FETs (MBCFET): stacked nanosheet channels with the gate on all four sides, replacing FinFET for better electrostatic control.
AutomotiveAI & HPCData Center+1
Samsung HBM4 is the company’s current high-bandwidth DRAM stack for AI accelerators, with an advanced base die and stacked DRAM cubes. Samsung’s official HBM family page covers HBM3E through HBM4/HBM4E as the AI-memory roadmap.
AI & HPCData CenterView Technology
Samsung V10 BV-NAND is bonded vertical NAND with more than 400 word lines, brought to mass-production readiness for AI storage.
AI & HPCData CenterConsumer ElectronicsView Technology
