Discover 169 technologies from leading innovators around the world.
Samsung’s 3 nm foundry node introduced Gate-All-Around transistors as Multi-Bridge-Channel FETs (MBCFET): stacked nanosheet channels with the gate on all four sides, replacing FinFET for better electrostatic control.
AutomotiveAI & HPCData Center+1View Technology
Samsung V10 BV-NAND is bonded vertical NAND with more than 400 word lines, brought to mass-production readiness for AI storage.
AI & HPCData CenterConsumer ElectronicsView Technology
