AGNIT Gallium Nitride

AGNIT publishes gallium nitride semiconductor technology spanning epitaxial wafers and RF devices for high-frequency and high-power electronic systems in telecommunications and related strategic applications.

Official pages describe MOCVD-grown GaN wafers on silicon, silicon carbide and sapphire substrates, together with GaN RF transistors offered as bare die, matched or unmatched parts for high-frequency transmit use. AGNIT presents a wafers-to-devices flow for telecommunications, automotive and defence applications, including RF HEMT devices and evaluation boards, rather than as a finished radio system. This independent listing identifies that GaN materials-and-device technology as one family. Wafer specifications, frequency coverage and qualification data should be confirmed on AGNIT's current technology and product pages.