Discover 169 technologies from leading innovators around the world.
Rohm EcoGaN is a gallium-nitride power-device family, not a silicon MOSFET catalog.
AutomotiveData CenterIndustrial+1View Technology
Silergy’s integrated PMIC platform covers multi-rail power-management ICs, not discrete MOSFETs.
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TrenchFET Gen V Power MOSFETs are Vishay's current published trench power-MOSFET generation.
AutomotiveIndustrialConsumer Electronics+1View Technology
onsemi EliteSiC is the company’s silicon-carbide power-device platform for traction, industrial and energy conversion.
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STPOWER GaN is STMicroelectronics’ gallium nitride power-transistor family, including intelligent integrated STi2GaN solutions. Distinct from STPOWER silicon carbide MOSFETs.
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Infineon OptiMOS is a low- and mid-voltage trench silicon MOSFET technology family for high-frequency power conversion. Distinct from CoolMOS, CoolSiC and CoolGaN.
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AGNIT publishes gallium nitride semiconductor technology spanning epitaxial wafers and RF devices for high-frequency and high-power electronic systems in telecommunications and related strategic applications.
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STPOWER silicon carbide MOSFET technology for high-voltage switching in automotive, industrial, energy and power-conversion systems. Distinct from STPOWER GaN.
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Microchip mSiC is a silicon carbide power semiconductor technology family spanning MOSFETs, Schottky barrier diodes, bare die and power modules. Those form factors are not separate listings.
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Wolfspeed discrete silicon carbide MOSFET product line for power-conversion designs in industrial, energy and automotive systems.
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Infineon silicon carbide MOSFET family (CoolSiC) offered as discrete devices and power modules for power-conversion designs.
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