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22 results for Foundry / Process
SkyWater RH90 is a radiation-hardened 90 nm CMOS foundry process, not processor IP and not a packaged rad-hard MCU.
IndustrialAerospace & DefenseView Technology
Powerchip 3D AI Foundry is a wafer-on-wafer logic/memory stacking foundry offering, parked in Advanced Packaging because Foundry / Process does not yet exist.
AutomotiveAI & HPCData CenterView Technology
Vanguard BCD, UHV and SOI are specialty foundry process platforms for power management, parked in Power pending Foundry / Process.
AutomotiveIndustrialConsumer Electronics+1View Technology
Qorvo Elite360 is a GaN and GaAs foundry-services platform, parked in Design & IP because Foundry / Process does not yet exist.
AutomotiveTelecommunicationsAerospace & DefenseView Technology
MACOM’s European Semiconductor Center publishes GaAs and GaN III-V foundry processes for microwave and mmWave devices.
Data CenterTelecommunicationsAerospace & DefenseView Technology
UMC 22ULP/ULL is the foundry’s 22-nanometer ultra-low-power / ultra-low-leakage logic process platform.
AutomotiveConsumer ElectronicsTelecommunications+1View Technology
SMIC 28nm HKMG is the foundry’s published 28-nanometer high-k metal-gate logic process, documented in SMIC newsroom coverage.
AI & HPCConsumer ElectronicsTelecommunicationsView Technology
Hua Hong’s embedded memory process platform is a specialty foundry offering for embedded non-volatile memory on logic processes.
AutomotiveIndustrialConsumer Electronics+1View Technology
Tower Semiconductor SiGe BiCMOS is a specialty analog/RF foundry process combining silicon-germanium HBTs with CMOS.
AutomotiveData CenterTelecommunications+1View Technology
22FDX is GlobalFoundries’ 22 nm fully depleted SOI platform: a thin-body transistor on an insulating layer, targeting low-power, RF, automotive and IoT designs that do not need leading-edge GAA.
AutomotiveConsumer ElectronicsTelecommunications+1View Technology
Samsung’s 3 nm foundry node introduced Gate-All-Around transistors as Multi-Bridge-Channel FETs (MBCFET): stacked nanosheet channels with the gate on all four sides, replacing FinFET for better electrostatic control.
AutomotiveAI & HPCData Center+1View Technology
